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Semiautomatic Dicing Saw (DISCO DAD3220)
Quality oriented* spindle dicing to separate die from wafers
Compatible wafer materials: Silicon, glass & quartz, fused silica
*stable, high grade blades are used
Specifications for standard procedure | |
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Wafer size | < 6 inches |
Maximum wafer thickness | typical: ~1.2 mm (Please inquire for wafer thickness between 1.2 – 2.4 mm) |
Acceptable dicing street gap (range depending on wafer thickness) | 30~65 µm (Silicon); 100~150 µm (Quartz) |
Rates (tentative) | |
UC-system | $31/hr |
Others | $80/hr |
Wafer Bonder (AML-AWB Aligner)
1. Anodic Bonding
Wafer-level anodic bonding / field assisted bonding service of joining glass to silicon. The system is equipped with in-situ alignment with 1-5 micron accuracy depending on options & wafers.
Compatible wafer materials: Si, Pyrex 7740, Borofloat 33
Specifications for standard procedure | |
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Wafer size | 4 inches |
Minimum wafer thickness | Glass: 200 µm; Si: 100 µm |
2. Thermo-Compression Bonding
Thermo-compression bonding bonds two wafers through an adhesion metal. Suitable for applications requiring sealing of evacuated cavities.
The system is equipped with in-situ alignment with 1-5 micron accuracy depending on options & wafers.
Specifications for standard procedure | |
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Wafer size | 4 inches |
Compatible adhesive metals | Au, Cu, Al |
Operation Rates (tentative) | |
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UC-system | $48/hr |
Others | $120/hr |
Equipment Conditioning Rates (tentative) | |
UC-system | $6/hr |
Others | $45/hr |